Macro model and sense amplifier for a MRAM

Ji Hyun Kim, Jung Wha Lee, Seung Jun Lee, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


For the simulation of the architecture for a magnetoresistive random access memory (MRAM) based on GMR (giant magnetoresistance) and a MTJ (magnetic tunnel junction) cell having a hysteretic characteristics, a macro model showing this hysteresis is required. Also, a new sense amplifier is needed for the MRAM because the cell is destroyed at high voltages. Thus, this work presents a macro model and a sensing circuit for a MRAM. The macro model is realized by using a six-terminal subcircuit, which emulates the hysteretic nature of MRAM cell, and read/write simulations are possible. A current-source bit-line-clamped sense amplifier maintains a low voltage on the bit line during the full VDD sensing, so it is suitable for sensing the MRAM cell.

Original languageEnglish
Pages (from-to)896-901
Number of pages6
JournalJournal of the Korean Physical Society
Issue number6
StatePublished - Dec 2002


  • Macru-model
  • MRAM
  • Sense-amplifier


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