Low-voltage pentacene transistor inverters using micro-contact printed nano-layer

Kwang H. Lee; Min Suk Oh; Byoung H. Lee; Myung M. Sung; Seongil Im

doi:10.1039/b922675c

Low-voltage pentacene transistor inverters using micro-contact printed nano-layer

Kwang H. Lee, Min Suk Oh, Byoung H. Lee, Myung M. Sung, Seongil Im

Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report on low-voltage inverters with two pentacene-based thin-film transistors (TFTs), one of which has been fabricated on a dielectric surface selected by micro-contact printing (μCP). When a self-assembled monolayer (SAM) of 7-octenyltrichlorosilane (7-OTS) was printed on AlO_x dielectric oxide, the TFT with the μCP-SAM displayed a large threshold voltage (V_th) shift (3 V shift under -5 V operation), increased device current, and clearly changed pentacene surface morphology as compared to those of the other TFT without μCP-SAM. Those results are attributed to the 7-OTS-modified pentacene/AlO_x interface. Our inverter, composed of two TFTs with and without μCP-SAM, shows a high gain of ∼50 at a supply voltage (V_DD) of -20 V.

Original language	English
Pages (from-to)	663-665
Number of pages	3
Journal	Journal of Materials Chemistry
Volume	20
Issue number	4
DOIs	https://doi.org/10.1039/b922675c
State	Published - 2010

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abstract = "We report on low-voltage inverters with two pentacene-based thin-film transistors (TFTs), one of which has been fabricated on a dielectric surface selected by micro-contact printing (μCP). When a self-assembled monolayer (SAM) of 7-octenyltrichlorosilane (7-OTS) was printed on AlOx dielectric oxide, the TFT with the μCP-SAM displayed a large threshold voltage (Vth) shift (3 V shift under -5 V operation), increased device current, and clearly changed pentacene surface morphology as compared to those of the other TFT without μCP-SAM. Those results are attributed to the 7-OTS-modified pentacene/AlOx interface. Our inverter, composed of two TFTs with and without μCP-SAM, shows a high gain of ∼50 at a supply voltage (VDD) of -20 V.",

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AU - Lee, Kwang H.

AU - Oh, Min Suk

AU - Lee, Byoung H.

AU - Sung, Myung M.

AU - Im, Seongil

PY - 2010

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AB - We report on low-voltage inverters with two pentacene-based thin-film transistors (TFTs), one of which has been fabricated on a dielectric surface selected by micro-contact printing (μCP). When a self-assembled monolayer (SAM) of 7-octenyltrichlorosilane (7-OTS) was printed on AlOx dielectric oxide, the TFT with the μCP-SAM displayed a large threshold voltage (Vth) shift (3 V shift under -5 V operation), increased device current, and clearly changed pentacene surface morphology as compared to those of the other TFT without μCP-SAM. Those results are attributed to the 7-OTS-modified pentacene/AlOx interface. Our inverter, composed of two TFTs with and without μCP-SAM, shows a high gain of ∼50 at a supply voltage (VDD) of -20 V.

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Low-voltage pentacene transistor inverters using micro-contact printed nano-layer

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