Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

Joonggyu Kim, Junhong Na, Min Kyu Joo, Dongseok Suh

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available graphene-on-SiO 2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.

Original languageEnglish
Pages (from-to)4226-4232
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number4
StatePublished - 30 Jan 2019

Bibliographical note

Publisher Copyright:
Copyright © 2019 American Chemical Society.


  • Hall element array
  • graphene
  • ionic gating
  • low-voltage operation
  • magnetic Hall sensor


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