Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices

Tae Yon Lee; Kijoon H.P. Kim; Dong Seok Suh; Cheolkyu Kim; Youn Seon Kang; David G. Cahill; Dongbok Lee; Min Hyun Lee; Min Ho Kwon; Ki Bum Kim; Yoonho Khang

doi:10.1063/1.3155202

Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices

Tae Yon Lee, Kijoon H.P. Kim, Dong Seok Suh, Cheolkyu Kim, Youn Seon Kang, David G. Cahill, Dongbok Lee, Min Hyun Lee, Min Ho Kwon, Ki Bum Kim, Yoonho Khang

Department of Physics

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.

Original language	English
Article number	243103
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3155202
State	Published - 2009

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title = "Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices",

abstract = "Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.",

author = "Lee, {Tae Yon} and Kim, {Kijoon H.P.} and Suh, {Dong Seok} and Cheolkyu Kim and Kang, {Youn Seon} and Cahill, {David G.} and Dongbok Lee and Lee, {Min Hyun} and Kwon, {Min Ho} and Kim, {Ki Bum} and Yoonho Khang",

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AU - Lee, Tae Yon

AU - Kim, Kijoon H.P.

AU - Suh, Dong Seok

AU - Kim, Cheolkyu

AU - Kang, Youn Seon

AU - Cahill, David G.

AU - Lee, Dongbok

AU - Lee, Min Hyun

AU - Kwon, Min Ho

AU - Kim, Ki Bum

AU - Khang, Yoonho

PY - 2009

Y1 - 2009

N2 - Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.

AB - Nanometer scale Ge2 Sb2 Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices.

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VL - 94

JO - Applied Physics Letters

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ER -

Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices

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