Low-temperature saturation of dephasing in heavily doped polyacetylene

A. N. Aleshin, V. I. Kozub, D. S. Suh, Y. W. Park

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Based on studies of low-temperature electronic transport in heavily doped polyacetylene, we provide evidence that the low-temperature saturation of electron dephasing reported earlier for metallic and semiconducting materials [P. Mohanty, E.M.Q. Jariwala, and R.A. Webb, Phys. Rev. Lett. 78, 3366 (1997)] is also exhibited in conducting polymers. We suggest a simple model to explain such behavior that involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.

Original languageEnglish
Article number224208
Pages (from-to)2242081-2242085
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number22
StatePublished - 1 Dec 2001


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