Low-temperature saturation of dephasing in heavily doped conjugated polymers

A. N. Aleshin, V. I. Kozub, D. S. Suh, Y. W. Park

Research output: Contribution to journalArticlepeer-review


Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalCurrent Applied Physics
Issue number1
StatePublished - 2002

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for ANA is from the BK-21 Program of Ministry of Education (MOE), Korea. A portion of this work was performed at the National High Magnetic Field Laboratory at Tallahassee, Florida, which is supported by NSF Cooperative Agreement no. DMR-95-27035 and by State of Florida, USA.


  • Conducting polymers
  • Conductivity
  • Magnetoresistance


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