Low-temperature saturation of dephasing in heavily doped conjugated polymers

A. N. Aleshin; V. I. Kozub; D. S. Suh; Y. W. Park

doi:10.1016/s1567-1739(01)00099-2

Low-temperature saturation of dephasing in heavily doped conjugated polymers

A. N. Aleshin, V. I. Kozub, D. S. Suh, Y. W. Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.

Original language	English
Pages (from-to)	91-96
Number of pages	6
Journal	Current Applied Physics
Volume	2
Issue number	1
DOIs	https://doi.org/10.1016/s1567-1739(01)00099-2
State	Published - 2002

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for ANA is from the BK-21 Program of Ministry of Education (MOE), Korea. A portion of this work was performed at the National High Magnetic Field Laboratory at Tallahassee, Florida, which is supported by NSF Cooperative Agreement no. DMR-95-27035 and by State of Florida, USA.

Keywords

Conducting polymers
Conductivity
Magnetoresistance

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10.1016/s1567-1739(01)00099-2

Cite this

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title = "Low-temperature saturation of dephasing in heavily doped conjugated polymers",

abstract = "Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.",

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doi = "10.1016/s1567-1739(01)00099-2",

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AU - Aleshin, A. N.

AU - Kozub, V. I.

AU - Suh, D. S.

AU - Park, Y. W.

N1 - Funding Information: This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for ANA is from the BK-21 Program of Ministry of Education (MOE), Korea. A portion of this work was performed at the National High Magnetic Field Laboratory at Tallahassee, Florida, which is supported by NSF Cooperative Agreement no. DMR-95-27035 and by State of Florida, USA.

PY - 2002

Y1 - 2002

N2 - Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.

AB - Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.

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KW - Magnetoresistance

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JO - Current Applied Physics

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Low-temperature saturation of dephasing in heavily doped conjugated polymers

Abstract

Bibliographical note

Keywords

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