Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

Byoung H. Lee; Jae K. Hwang; Jae W. Nam; Song U. Lee; Jun T. Kim; Sang M. Koo; A. Baunemann; Roland A. Fischer; Myung M. Sung

doi:10.1002/anie.200900414

Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

Byoung H. Lee, Jae K. Hwang, Jae W. Nam, Song U. Lee, Jun T. Kim, Sang M. Koo, A. Baunemann, Roland A. Fischer, Myung M. Sung

Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH₂NMe ₂)₂] with Et₂Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

Original language	English
Pages (from-to)	4536-4539
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	48
Issue number	25
DOIs	https://doi.org/10.1002/anie.200900414
State	Published - 8 Jun 2009

Keywords

Atomic layer deposition
Copper
Surface chemistry
Thin films
Zinc

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10.1002/anie.200900414

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Lee, B. H., Hwang, J. K., Nam, J. W., Lee, S. U., Kim, J. T., Koo, S. M., Baunemann, A., Fischer, R. A., & Sung, M. M. (2009). Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc. Angewandte Chemie - International Edition, 48(25), 4536-4539. https://doi.org/10.1002/anie.200900414

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abstract = "A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.",

keywords = "Atomic layer deposition, Copper, Surface chemistry, Thin films, Zinc",

author = "Lee, {Byoung H.} and Hwang, {Jae K.} and Nam, {Jae W.} and Lee, {Song U.} and Kim, {Jun T.} and Koo, {Sang M.} and A. Baunemann and Fischer, {Roland A.} and Sung, {Myung M.}",

year = "2009",

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language = "English",

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AU - Lee, Byoung H.

AU - Hwang, Jae K.

AU - Nam, Jae W.

AU - Lee, Song U.

AU - Kim, Jun T.

AU - Koo, Sang M.

AU - Baunemann, A.

AU - Fischer, Roland A.

AU - Sung, Myung M.

PY - 2009/6/8

Y1 - 2009/6/8

N2 - A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

AB - A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

KW - Atomic layer deposition

KW - Copper

KW - Surface chemistry

KW - Thin films

KW - Zinc

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ER -

Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

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