Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

Byoung H. Lee, Jae K. Hwang, Jae W. Nam, Song U. Lee, Jun T. Kim, Sang M. Koo, A. Baunemann, Roland A. Fischer, Myung M. Sung

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

Original languageEnglish
Pages (from-to)4536-4539
Number of pages4
JournalAngewandte Chemie - International Edition
Volume48
Issue number25
DOIs
StatePublished - 8 Jun 2009

Keywords

  • Atomic layer deposition
  • Copper
  • Surface chemistry
  • Thin films
  • Zinc

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