Low switching voltage, high-stability organic phototransistor memory based on a photoactive dielectric and an electron trapping layer

Toan Thanh Dao, Heisuke Sakai, Kei Ohkubo, Shunichi Fukuzumi, Hideyuki Murata

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

An organic phototransistor memory is presented with a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (CYTOP). The dielectric gate layer functioned as an insulator in the dark and as a charge generator and/or conductive layer under photoirradiation, which resulted in a low program voltage and an operation with long-term stability. A shift in the phototransistor threshold voltage could be reversibly tuned from −5.8 to 6.2 V with a low switching voltage (≤8 V) under UV irradiation. Programmed/erased states were obtained by applying gate pulse voltages of −8/5 V under UV irradiation from an external light source. The phototransistor memory exhibited high stability with a large on/off current ratio of ~105 for a retention time up to 2 × 106 s with a reliability greater than 103 programming/erasing testing cycles. These findings introduce a new approach for organic phototransistor non-volatile memory with high stability.

Original languageEnglish
Article number105505
JournalOrganic Electronics
Volume77
DOIs
StatePublished - Feb 2020

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

  • Controllable threshold voltage
  • Electron-trapping
  • Long retention time
  • Organic phototransistor memory
  • Photoactive gate dielectric
  • Programmable organic phototransistor

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