Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

Dong Ho Shin; Young Gyu You; Sung Il Jo; Goo Hwan Jeong; Eleanor E.B. Campbell; Hyun Jong Chung; Sung Ho Jhang

doi:10.3390/nano12213820

Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS₂ Barristors

Dong Ho Shin, Young Gyu You, Sung Il Jo, Goo Hwan Jeong, Eleanor E.B. Campbell, Hyun Jong Chung, Sung Ho Jhang

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

Original language	English
Article number	3820
Journal	Nanomaterials
Volume	12
Issue number	21
DOIs	https://doi.org/10.3390/nano12213820
State	Published - Nov 2022

Bibliographical note

Publisher Copyright:
© 2022 by the authors.

Keywords

barristor
complementary inverter
graphene/carbon-nanotube junction
low power

Access to Document

10.3390/nano12213820

Cite this

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title = "Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors",

abstract = "The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.",

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AU - Shin, Dong Ho

AU - You, Young Gyu

AU - Jo, Sung Il

AU - Jeong, Goo Hwan

AU - Campbell, Eleanor E.B.

AU - Chung, Hyun Jong

AU - Jhang, Sung Ho

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AB - The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

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