Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

Dong Ho Shin, Young Gyu You, Sung Il Jo, Goo Hwan Jeong, Eleanor E.B. Campbell, Hyun Jong Chung, Sung Ho Jhang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

Original languageEnglish
Article number3820
Issue number21
StatePublished - Nov 2022

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  • barristor
  • complementary inverter
  • graphene/carbon-nanotube junction
  • low power


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