Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hyeokjae Lee, Jong Ho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number9
DOIs
StatePublished - Sep 2001

Bibliographical note

Funding Information:
Manuscript received June 11, 2001; revised June 22, 2001. This work was supported by National Research Laboratory (NRL) project of the Ministry of Science and Technology and Brain Korea (BK) 21 Project. The review of this letter was arranged by Editor K. De Meyer. H. Lee, Y. J. Park and H. S. Min are with the School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea (e-mail: hjlee328@amity.snu.ac.kr). J.-H. Lee is with the School of Electrical Engineering, Wonkwang University, Iksan, Korea. H. Shin is with the Department of Information and Electronics Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(01)07745-X.

Keywords

  • Analog-RF applications
  • Charge pumping
  • Low-frequency noise
  • MOSFETs
  • SOI
  • STI

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