Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hyeokjae Lee, Jong Ho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 2001


  • Analog-RF applications
  • Charge pumping
  • Low-frequency noise
  • SOI
  • STI


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