@article{a3b0b68c3148405aa12943b893bab865,
title = "Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs",
abstract = "The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.",
keywords = "Analog-RF applications, Charge pumping, Low-frequency noise, MOSFETs, SOI, STI",
author = "Hyeokjae Lee and Lee, {Jong Ho} and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",
note = "Funding Information: Manuscript received June 11, 2001; revised June 22, 2001. This work was supported by National Research Laboratory (NRL) project of the Ministry of Science and Technology and Brain Korea (BK) 21 Project. The review of this letter was arranged by Editor K. De Meyer. H. Lee, Y. J. Park and H. S. Min are with the School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea (e-mail: hjlee328@amity.snu.ac.kr). J.-H. Lee is with the School of Electrical Engineering, Wonkwang University, Iksan, Korea. H. Shin is with the Department of Information and Electronics Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(01)07745-X.",
year = "2001",
month = sep,
doi = "10.1109/55.944336",
language = "English",
volume = "22",
pages = "449--451",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}