Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hyeokjae Lee; Jong Ho Lee; Hyungsoon Shin; Young June Park; Hong Shick Min

doi:10.1109/55.944336

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hyeokjae Lee, Jong Ho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.

Original language	English
Pages (from-to)	449-451
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	9
DOIs	https://doi.org/10.1109/55.944336
State	Published - Sep 2001

Bibliographical note

Funding Information:
Manuscript received June 11, 2001; revised June 22, 2001. This work was supported by National Research Laboratory (NRL) project of the Ministry of Science and Technology and Brain Korea (BK) 21 Project. The review of this letter was arranged by Editor K. De Meyer. H. Lee, Y. J. Park and H. S. Min are with the School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea (e-mail: [email protected]). J.-H. Lee is with the School of Electrical Engineering, Wonkwang University, Iksan, Korea. H. Shin is with the Department of Information and Electronics Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(01)07745-X.

Keywords

Analog-RF applications
Charge pumping
Low-frequency noise
MOSFETs
SOI
STI

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Cite this

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title = "Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs",

abstract = "The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.",

keywords = "Analog-RF applications, Charge pumping, Low-frequency noise, MOSFETs, SOI, STI",

author = "Hyeokjae Lee and Lee, {Jong Ho} and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",

note = "Funding Information: Manuscript received June 11, 2001; revised June 22, 2001. This work was supported by National Research Laboratory (NRL) project of the Ministry of Science and Technology and Brain Korea (BK) 21 Project. The review of this letter was arranged by Editor K. De Meyer. H. Lee, Y. J. Park and H. S. Min are with the School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea (e-mail: [email protected]). J.-H. Lee is with the School of Electrical Engineering, Wonkwang University, Iksan, Korea. H. Shin is with the Department of Information and Electronics Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(01)07745-X.",

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AU - Lee, Hyeokjae

AU - Lee, Jong Ho

AU - Shin, Hyungsoon

AU - Park, Young June

AU - Min, Hong Shick

N1 - Funding Information: Manuscript received June 11, 2001; revised June 22, 2001. This work was supported by National Research Laboratory (NRL) project of the Ministry of Science and Technology and Brain Korea (BK) 21 Project. The review of this letter was arranged by Editor K. De Meyer. H. Lee, Y. J. Park and H. S. Min are with the School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea (e-mail: [email protected]). J.-H. Lee is with the School of Electrical Engineering, Wonkwang University, Iksan, Korea. H. Shin is with the Department of Information and Electronics Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(01)07745-X.

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N2 - The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.

AB - The low-frequency noise characteristics of SOI MOSFETs with shallow trench isolation (STI) structure are investigated for various device sizes with three different gate shapes. Devices with channel region butted to the STI show the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI butted to channel region show much less increasing noise power spectral density with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identified as the cause of these anomalous phenomena.

KW - Analog-RF applications

KW - Charge pumping

KW - Low-frequency noise

KW - MOSFETs

KW - SOI

KW - STI

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Abstract

Bibliographical note

Keywords

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