Low crystallization temperature and unusual switching properties of ferroelectric Nb-doped Bi4Ti3O12 thin films prepared by rapid thermal annealing

Jong Kuk Kim; Sang Su Kim; Jinheung Kim

doi:10.1557/JMR.2003.0263

Low crystallization temperature and unusual switching properties of ferroelectric Nb-doped Bi₄Ti₃O₁₂ thin films prepared by rapid thermal annealing

Jong Kuk Kim, Sang Su Kim, Jinheung Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Nb-doped Bi₄Ti₃O₁₂ (Nb-BIT) ferroelectric thin films were prepared in the presence of a nonionic surfactant (pluronic P123) added as an additive to the sol solution and by rapid thermal annealing (RTA). The film annealed at the relatively low temperature of 600°C was well crystallized and showed good ferroelectricity. The switching charge of capacitors with polarization reversal increased with a large amplitude and low frequency of the applied pulse, and gradually decreased with a small amplitude and high frequency. The remanent polarization (2P_r) after subjecting the Nb-BIT capacitors to 10⁸ read/write cycles was 45 μC/cm², which is remarkably higher than 20 μC/cm² observed in the initial state. These phenomena seem to appear by the presence of space charges trapped after heat treatment by the RTA process.

Original language	English
Pages (from-to)	1884-1888
Number of pages	5
Journal	Journal of Materials Research
Volume	18
Issue number	8
DOIs	https://doi.org/10.1557/JMR.2003.0263
State	Published - Aug 2003

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).

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10.1557/JMR.2003.0263

Cite this

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title = "Low crystallization temperature and unusual switching properties of ferroelectric Nb-doped Bi4Ti3O12 thin films prepared by rapid thermal annealing",

abstract = "Nb-doped Bi4Ti3O12 (Nb-BIT) ferroelectric thin films were prepared in the presence of a nonionic surfactant (pluronic P123) added as an additive to the sol solution and by rapid thermal annealing (RTA). The film annealed at the relatively low temperature of 600°C was well crystallized and showed good ferroelectricity. The switching charge of capacitors with polarization reversal increased with a large amplitude and low frequency of the applied pulse, and gradually decreased with a small amplitude and high frequency. The remanent polarization (2Pr) after subjecting the Nb-BIT capacitors to 108 read/write cycles was 45 μC/cm2, which is remarkably higher than 20 μC/cm2 observed in the initial state. These phenomena seem to appear by the presence of space charges trapped after heat treatment by the RTA process.",

author = "Kim, {Jong Kuk} and Kim, {Sang Su} and Jinheung Kim",

note = "Funding Information: This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).",

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doi = "10.1557/JMR.2003.0263",

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T1 - Low crystallization temperature and unusual switching properties of ferroelectric Nb-doped Bi4Ti3O12 thin films prepared by rapid thermal annealing

AU - Kim, Jong Kuk

AU - Kim, Sang Su

AU - Kim, Jinheung

N1 - Funding Information: This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).

PY - 2003/8

Y1 - 2003/8

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AB - Nb-doped Bi4Ti3O12 (Nb-BIT) ferroelectric thin films were prepared in the presence of a nonionic surfactant (pluronic P123) added as an additive to the sol solution and by rapid thermal annealing (RTA). The film annealed at the relatively low temperature of 600°C was well crystallized and showed good ferroelectricity. The switching charge of capacitors with polarization reversal increased with a large amplitude and low frequency of the applied pulse, and gradually decreased with a small amplitude and high frequency. The remanent polarization (2Pr) after subjecting the Nb-BIT capacitors to 108 read/write cycles was 45 μC/cm2, which is remarkably higher than 20 μC/cm2 observed in the initial state. These phenomena seem to appear by the presence of space charges trapped after heat treatment by the RTA process.

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