We show that good quality single-walled and multi-walled carbon nanotubes can be grown on CMOS-compatible metal electrodes at ambient room temperature using highly localised catalyst heating at nanostructured electrodes. The method is relatively straightforward and allows considerable flexibility in the kinds of devices that can be fabricated as well as allowing CVD nanotube growth to take place in the close vicinity of temperature-sensitive materials and devices.
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Aug 2006|