Long-Range Lattice Engineering of MoTe2 by a 2D Electride

Sera Kim, Seunghyun Song, Jongho Park, Ho Sung Yu, Suyeon Cho, Dohyun Kim, Jaeyoon Baik, Duk Hyun Choe, K. J. Chang, Young Hee Lee, Sung Wng Kim, Heejun Yang

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to ∼1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N]+·e- to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 × 1014 cm-2 and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metal-semiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N]+·e-. The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.

Original languageEnglish
Pages (from-to)3363-3368
Number of pages6
JournalNano Letters
Volume17
Issue number6
DOIs
StatePublished - 14 Jun 2017

Keywords

  • doping
  • electride
  • electron diffusion
  • MoTe
  • phase transition
  • work function

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