Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation

  • Yoon Kim
  • , Jang Gn Yun
  • , Il Han Park
  • , Seongjae Cho
  • , Jung Hoon Lee
  • , Se Hwan Park
  • , Dong Hua Lee
  • , Doo Hyun Kim
  • , Gil Sung Lee
  • , Won Bo Sim
  • , Jong Duk Lee
  • , Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A SONOS flash memory having locally-separated vertical channels is investigated. The vertical SONOS flash memory has a scaling issue related with the fin width. As the fin width is shorter, electrical interference between paired cells (PCI) is severer. To overcome PCI, we propose the locally-separated vertical channel SONOS (LSVC SONOS) structure. We demonstrate reliable operation of LSVC SONOS using ATLAS simulation. This device structure is promising for multi-storage and multi-level operation.

Original languageEnglish
Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
StatePublished - 2008
EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
Duration: 15 Jun 200816 Jun 2008

Publication series

NameIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

ConferenceIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/TerritoryUnited States
CityHonolulu, HI
Period15/06/0816/06/08

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