Local observation of ferroelectric Bi3.25la 0.75Ti3O12 thin films by atomic force microscopy

T. Y. Kim; J. H. Lee; Y. J. Oh; M. R. Choi; H. R. Yoon; W. Jo; H. J. Nam

Local observation of ferroelectric Bi_3.25la _0.75Ti₃O₁₂ thin films by atomic force microscopy

T. Y. Kim, J. H. Lee, Y. J. Oh, M. R. Choi, H. R. Yoon, W. Jo, H. J. Nam

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Ferroelectric Bi_3.25La_0.75Ti₃O ₁₂ (BLT) thin films have been grown by a sol-gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. Highly (001)- and (h00)-oriented BLT thin films are prepared on Pt/TiO₂ coated SiO₂/Si(100), depending on annealing temperature. Structural properties, surface morphology, and electrical properties are studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic electron microscopy (AEM), respectively. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are strongly dependent on crystal orientation, suggesting that annealing temperature is related to domain formation and its polarization-reversal dynamics.

Original language	English
Pages (from-to)	S595-S599
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	SUPPL. 2
State	Published - Dec 2006

Keywords

(Bi,La)TiO
Annealing temperature
Atomic force microscopy
Domain
Ferroelectric
Sol-gel

Cite this

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title = "Local observation of ferroelectric Bi3.25la 0.75Ti3O12 thin films by atomic force microscopy",

abstract = "Ferroelectric Bi3.25La0.75Ti3O 12 (BLT) thin films have been grown by a sol-gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. Highly (001)- and (h00)-oriented BLT thin films are prepared on Pt/TiO2 coated SiO2/Si(100), depending on annealing temperature. Structural properties, surface morphology, and electrical properties are studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic electron microscopy (AEM), respectively. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are strongly dependent on crystal orientation, suggesting that annealing temperature is related to domain formation and its polarization-reversal dynamics.",

keywords = "(Bi,La)TiO, Annealing temperature, Atomic force microscopy, Domain, Ferroelectric, Sol-gel",

author = "Kim, {T. Y.} and Lee, {J. H.} and Oh, {Y. J.} and Choi, {M. R.} and Yoon, {H. R.} and W. Jo and Nam, {H. J.}",

year = "2006",

month = dec,

language = "English",

volume = "49",

pages = "S595--S599",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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TY - JOUR

T1 - Local observation of ferroelectric Bi3.25la 0.75Ti3O12 thin films by atomic force microscopy

AU - Kim, T. Y.

AU - Lee, J. H.

AU - Oh, Y. J.

AU - Choi, M. R.

AU - Yoon, H. R.

AU - Jo, W.

AU - Nam, H. J.

PY - 2006/12

Y1 - 2006/12

N2 - Ferroelectric Bi3.25La0.75Ti3O 12 (BLT) thin films have been grown by a sol-gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. Highly (001)- and (h00)-oriented BLT thin films are prepared on Pt/TiO2 coated SiO2/Si(100), depending on annealing temperature. Structural properties, surface morphology, and electrical properties are studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic electron microscopy (AEM), respectively. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are strongly dependent on crystal orientation, suggesting that annealing temperature is related to domain formation and its polarization-reversal dynamics.

AB - Ferroelectric Bi3.25La0.75Ti3O 12 (BLT) thin films have been grown by a sol-gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. Highly (001)- and (h00)-oriented BLT thin films are prepared on Pt/TiO2 coated SiO2/Si(100), depending on annealing temperature. Structural properties, surface morphology, and electrical properties are studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic electron microscopy (AEM), respectively. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are strongly dependent on crystal orientation, suggesting that annealing temperature is related to domain formation and its polarization-reversal dynamics.

KW - (Bi,La)TiO

KW - Annealing temperature

KW - Atomic force microscopy

KW - Domain

KW - Ferroelectric

KW - Sol-gel

UR - http://www.scopus.com/inward/record.url?scp=33846336486&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33846336486

SN - 0374-4884

VL - 49

SP - S595-S599

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 2

ER -

Local observation of ferroelectric Bi3.25la 0.75Ti3O12 thin films by atomic force microscopy

Abstract

Keywords

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Local observation of ferroelectric Bi_3.25la _0.75Ti₃O₁₂ thin films by atomic force microscopy