Line-shaped superconducting nbn thin film on a silicon oxide substrate

Jeong Gyun Kim; Dongseok Suh; Haeyong Kang

doi:10.9714/psac.2018.20.4.020

Line-shaped superconducting nbn thin film on a silicon oxide substrate

Jeong Gyun Kim, Dongseok Suh, Haeyong Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of 10 μm by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal–oxide–semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

Original language	English
Pages (from-to)	20-25
Number of pages	6
Journal	Progress in Superconductivity and Cryogenics (PSAC)
Volume	20
Issue number	4
DOIs	https://doi.org/10.9714/psac.2018.20.4.020
State	Published - 2018

Bibliographical note

Funding Information:
This work was supported by a 2-Year Research Grant of Pusan National University.

Publisher Copyright:
© 2018, Korea Institute of Applied Superconductivity and Cryogenics. All rights reserved.

Keywords

Ar Etching. Critical Temperature
Critical current density
Critical field
Niobium nitride
Sputtering deposition
Superconducting thin film

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10.9714/psac.2018.20.4.020

Cite this

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title = "Line-shaped superconducting nbn thin film on a silicon oxide substrate",

abstract = "Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of 10 μm by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal–oxide–semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.",

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AU - Kim, Jeong Gyun

AU - Suh, Dongseok

AU - Kang, Haeyong

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AB - Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of 10 μm by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal–oxide–semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

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Line-shaped superconducting nbn thin film on a silicon oxide substrate

Abstract

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Keywords

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