Line-shaped superconducting nbn thin film on a silicon oxide substrate

Jeong Gyun Kim, Dongseok Suh, Haeyong Kang

Research output: Contribution to journalArticlepeer-review


Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of 10 μm by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal–oxide–semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

Original languageEnglish
Pages (from-to)20-25
Number of pages6
JournalProgress in Superconductivity and Cryogenics (PSAC)
Issue number4
StatePublished - 2018

Bibliographical note

Funding Information:
This work was supported by a 2-Year Research Grant of Pusan National University.

Publisher Copyright:
© 2018, Korea Institute of Applied Superconductivity and Cryogenics. All rights reserved.


  • Ar Etching. Critical Temperature
  • Critical current density
  • Critical field
  • Niobium nitride
  • Sputtering deposition
  • Superconducting thin film


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