Leaky 2T Dynamic Random-Access Memory Devices Based on Nanometer-Thick Indium-Gallium−Zinc-Oxide Films for Reservoir Computing
- Junwon Jang
- , Seongmin Kim
- , Suyong Park
- , Soomin Kim
- , Sungjun Kim
- , Seongjae Cho
Research output: Contribution to journal › Article › peer-review
5
Scopus
citations