Leakage current behaviors of epitaxial and preferentially oriented Bi4Ti3O12 thin films grown on La0.5Sr0.5CoO3 bottom electrodes

W. Jo; K. H. Kim; T. W. Noh

doi:10.1063/1.113622

Leakage current behaviors of epitaxial and preferentially oriented Bi₄Ti₃O₁₂ thin films grown on La_0.5Sr_0.5CoO₃ bottom electrodes

W. Jo, K. H. Kim, T. W. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Epitaxial and preferentially oriented Bi₄Ti₃O₁₂ thin films were grown using pulsed laser deposition on LaAlO₃(001) and Al₂O₃(0001) substrates, respectively, with La_0.5Sr_0.5CoO₃ bottom electrode layers. X-ray diffraction analysis shows that the Bi₄Ti₃O₁₂ films are grown (001) and (104) oriented on La_0.5Sr_0.5CoO₃(001)/LaAlO₃(001) and La_0.5Sr_0.5CoO₃(111)/Al₂O ₃(0001), respectively. These growth behaviors can be explained using arrangements of oxygen ions. Cross-sectional scanning electron microscopy shows that microstructures of the heterostructures depend on the substrates. It is found that the growth behaviors and the microstructure affect leakage current behaviors of the Bi₄Ti₃O₁₂ layers. Ohmic and space-charge-limited conduction mechanisms are used to explain leakage current behaviors of the Bi₄Ti₃O₁₂ film on La_0.5Sr_0.5CoO₃/LaAlO₃(001) and La_0.5Sr_0.5CoO₃/Al₂O ₃(0001), respectively.

Original language	English
Pages (from-to)	3120
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113622
State	Published - 1995

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@article{776c68faf65b444a9dba79f18ea45b46,

title = "Leakage current behaviors of epitaxial and preferentially oriented Bi4Ti3O12 thin films grown on La0.5Sr0.5CoO3 bottom electrodes",

abstract = "Epitaxial and preferentially oriented Bi4Ti3O12 thin films were grown using pulsed laser deposition on LaAlO3(001) and Al2O3(0001) substrates, respectively, with La0.5Sr0.5CoO3 bottom electrode layers. X-ray diffraction analysis shows that the Bi4Ti3O12 films are grown (001) and (104) oriented on La0.5Sr0.5CoO3(001)/LaAlO3(001) and La0.5Sr0.5CoO3(111)/Al2O 3(0001), respectively. These growth behaviors can be explained using arrangements of oxygen ions. Cross-sectional scanning electron microscopy shows that microstructures of the heterostructures depend on the substrates. It is found that the growth behaviors and the microstructure affect leakage current behaviors of the Bi4Ti3O12 layers. Ohmic and space-charge-limited conduction mechanisms are used to explain leakage current behaviors of the Bi4Ti3O12 film on La0.5Sr0.5CoO3/LaAlO3(001) and La0.5Sr0.5CoO3/Al2O 3(0001), respectively.",

author = "W. Jo and Kim, {K. H.} and Noh, {T. W.}",

year = "1995",

doi = "10.1063/1.113622",

language = "English",

pages = "3120",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Leakage current behaviors of epitaxial and preferentially oriented Bi4Ti3O12 thin films grown on La0.5Sr0.5CoO3 bottom electrodes

AU - Jo, W.

AU - Kim, K. H.

AU - Noh, T. W.

PY - 1995

Y1 - 1995

N2 - Epitaxial and preferentially oriented Bi4Ti3O12 thin films were grown using pulsed laser deposition on LaAlO3(001) and Al2O3(0001) substrates, respectively, with La0.5Sr0.5CoO3 bottom electrode layers. X-ray diffraction analysis shows that the Bi4Ti3O12 films are grown (001) and (104) oriented on La0.5Sr0.5CoO3(001)/LaAlO3(001) and La0.5Sr0.5CoO3(111)/Al2O 3(0001), respectively. These growth behaviors can be explained using arrangements of oxygen ions. Cross-sectional scanning electron microscopy shows that microstructures of the heterostructures depend on the substrates. It is found that the growth behaviors and the microstructure affect leakage current behaviors of the Bi4Ti3O12 layers. Ohmic and space-charge-limited conduction mechanisms are used to explain leakage current behaviors of the Bi4Ti3O12 film on La0.5Sr0.5CoO3/LaAlO3(001) and La0.5Sr0.5CoO3/Al2O 3(0001), respectively.

AB - Epitaxial and preferentially oriented Bi4Ti3O12 thin films were grown using pulsed laser deposition on LaAlO3(001) and Al2O3(0001) substrates, respectively, with La0.5Sr0.5CoO3 bottom electrode layers. X-ray diffraction analysis shows that the Bi4Ti3O12 films are grown (001) and (104) oriented on La0.5Sr0.5CoO3(001)/LaAlO3(001) and La0.5Sr0.5CoO3(111)/Al2O 3(0001), respectively. These growth behaviors can be explained using arrangements of oxygen ions. Cross-sectional scanning electron microscopy shows that microstructures of the heterostructures depend on the substrates. It is found that the growth behaviors and the microstructure affect leakage current behaviors of the Bi4Ti3O12 layers. Ohmic and space-charge-limited conduction mechanisms are used to explain leakage current behaviors of the Bi4Ti3O12 film on La0.5Sr0.5CoO3/LaAlO3(001) and La0.5Sr0.5CoO3/Al2O 3(0001), respectively.

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U2 - 10.1063/1.113622

DO - 10.1063/1.113622

M3 - Article

AN - SCOPUS:36449002189

SN - 0003-6951

SP - 3120

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Leakage current behaviors of epitaxial and preferentially oriented Bi4Ti3O12 thin films grown on La0.5Sr0.5CoO3 bottom electrodes

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Leakage current behaviors of epitaxial and preferentially oriented Bi₄Ti₃O₁₂ thin films grown on La_0.5Sr_0.5CoO₃ bottom electrodes