Leakage current behaviors of Ba0.5Sr0.5TiO3 thin films on Pt, RuO2, and Pt/RuO2 bottom electrodes

W. Jo, D. C. Kim, K. Y. Kim

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Ba0.5Sr0.5TiO3 thin films were grown by rf-magnetron sputtering. Pt and RuO2 films were used as bottom electrodes of the Ba0.5Sr0.5TiO3 thin films. Further, a Pt/RuO2 hybrid electrode was adopted as an electrode for the film. Structural properties of the Ba0.5Sr0.5TiO3 thin films were found to be closely related to the type of the bottom electrodes. Dielectric constants of the films on Pt, RuO2 were measured at 500, 320, and 450 in the range of 100 Hz to approximately 1 MHz, respectively. Leakage current characteristics of the films were also found to be strongly dependent on the type of the electrodes and their microstructures.

Original languageEnglish
Pages (from-to)57-62
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume433
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 7 Apr 199612 Apr 1996

Fingerprint

Dive into the research topics of 'Leakage current behaviors of Ba0.5Sr0.5TiO3 thin films on Pt, RuO2, and Pt/RuO2 bottom electrodes'. Together they form a unique fingerprint.

Cite this