TY - JOUR
T1 - Large-Scale Graphene on Hexagonal-BN Hall Elements
T2 - Prediction of Sensor Performance without Magnetic Field
AU - Joo, Min Kyu
AU - Kim, Joonggyu
AU - Park, Ji Hoon
AU - Nguyen, Van Luan
AU - Kim, Ki Kang
AU - Lee, Young Hee
AU - Suh, Dongseok
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/9/27
Y1 - 2016/9/27
N2 - A graphene Hall element (GHE) is an optimal system for a magnetic sensor because of its perfect two-dimensional (2-D) structure, high carrier mobility, and widely tunable carrier concentration. Even though several proof-of-concept devices have been proposed, manufacturing them by mechanical exfoliation of 2-D material or electron-beam lithography is of limited feasibility. Here, we demonstrate a high quality GHE array having a graphene on hexagonal-BN (h-BN) heterostructure, fabricated by photolithography and large-area 2-D materials grown by chemical vapor deposition techniques. A superior performance of GHE was achieved with the help of a bottom h-BN layer, and showed a maximum current-normalized sensitivity of 1986 V/AT, a minimum magnetic resolution of 0.5 mG/Hz0.5 at f = 300 Hz, and an effective dynamic range larger than 74 dB. Furthermore, on the basis of a thorough understanding of the shift of charge neutrality point depending on various parameters, an analytical model that predicts the magnetic sensor operation of a GHE from its transconductance data without magnetic field is proposed, simplifying the evaluation of each GHE design. These results demonstrate the feasibility of this highly performing graphene device using large-scale manufacturing-friendly fabrication methods.
AB - A graphene Hall element (GHE) is an optimal system for a magnetic sensor because of its perfect two-dimensional (2-D) structure, high carrier mobility, and widely tunable carrier concentration. Even though several proof-of-concept devices have been proposed, manufacturing them by mechanical exfoliation of 2-D material or electron-beam lithography is of limited feasibility. Here, we demonstrate a high quality GHE array having a graphene on hexagonal-BN (h-BN) heterostructure, fabricated by photolithography and large-area 2-D materials grown by chemical vapor deposition techniques. A superior performance of GHE was achieved with the help of a bottom h-BN layer, and showed a maximum current-normalized sensitivity of 1986 V/AT, a minimum magnetic resolution of 0.5 mG/Hz0.5 at f = 300 Hz, and an effective dynamic range larger than 74 dB. Furthermore, on the basis of a thorough understanding of the shift of charge neutrality point depending on various parameters, an analytical model that predicts the magnetic sensor operation of a GHE from its transconductance data without magnetic field is proposed, simplifying the evaluation of each GHE design. These results demonstrate the feasibility of this highly performing graphene device using large-scale manufacturing-friendly fabrication methods.
KW - chemical vapor deposition
KW - graphene
KW - graphene Hall element
KW - hexagonal boron nitride
KW - large-area graphene device
KW - magnetic field sensor
UR - http://www.scopus.com/inward/record.url?scp=84989184281&partnerID=8YFLogxK
U2 - 10.1021/acsnano.6b04547
DO - 10.1021/acsnano.6b04547
M3 - Article
AN - SCOPUS:84989184281
SN - 1936-0851
VL - 10
SP - 8803
EP - 8811
JO - ACS Nano
JF - ACS Nano
IS - 9
ER -