Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic Field

Min Kyu Joo, Joonggyu Kim, Ji Hoon Park, Van Luan Nguyen, Ki Kang Kim, Young Hee Lee, Dongseok Suh

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


A graphene Hall element (GHE) is an optimal system for a magnetic sensor because of its perfect two-dimensional (2-D) structure, high carrier mobility, and widely tunable carrier concentration. Even though several proof-of-concept devices have been proposed, manufacturing them by mechanical exfoliation of 2-D material or electron-beam lithography is of limited feasibility. Here, we demonstrate a high quality GHE array having a graphene on hexagonal-BN (h-BN) heterostructure, fabricated by photolithography and large-area 2-D materials grown by chemical vapor deposition techniques. A superior performance of GHE was achieved with the help of a bottom h-BN layer, and showed a maximum current-normalized sensitivity of 1986 V/AT, a minimum magnetic resolution of 0.5 mG/Hz0.5 at f = 300 Hz, and an effective dynamic range larger than 74 dB. Furthermore, on the basis of a thorough understanding of the shift of charge neutrality point depending on various parameters, an analytical model that predicts the magnetic sensor operation of a GHE from its transconductance data without magnetic field is proposed, simplifying the evaluation of each GHE design. These results demonstrate the feasibility of this highly performing graphene device using large-scale manufacturing-friendly fabrication methods.

Original languageEnglish
Pages (from-to)8803-8811
Number of pages9
JournalACS Nano
Issue number9
StatePublished - 27 Sep 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.


  • chemical vapor deposition
  • graphene
  • graphene Hall element
  • hexagonal boron nitride
  • large-area graphene device
  • magnetic field sensor


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