Key factors affecting contact resistance in coplanar organic thin-film transistors

Sun Woo Jo, Seongjae Cho, Chang Hyun Kim

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


We present a comprehensive numerical analysis of contact resistance in coplanar organic thin-film transistors. A large number of hole-transporting organic transistors are investigated through two-dimensional finite-element simulation, by deliberately changing the channel length, source/drain electrode thickness, and hole-injection energy barrier heights. Gate-field-dependent terminal contact resistances of these devices are fully estimated and electrostatic distributions inside the organic semiconductor film are visualized for the understanding of physical mechanisms. It is found that the relationship between source/drain electrode thickness and contact resistance does not follow any simple trend and is also strongly associated with the injection energy barrier. Moreover, the origin of negative contact resistance in organic transistors featuring a minimal charge-injection barrier is elaborated. Finally, a direct impact of the semiconductor charge-carrier mobility on contact resistance is addressed, revealing a linear dependence of contact resistance on inverse mobility over a broad parameter range.

Original languageEnglish
Article number405101
JournalJournal of Physics D: Applied Physics
Issue number40
StatePublished - 6 Oct 2022

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (NRF-2019R1C1C1003356 and 2021M3H4A6A01048300).

Publisher Copyright:
© 2022 IOP Publishing Ltd.


  • charge-carrier mobility
  • contact resistance
  • device physics
  • numerical simulation
  • organic thin-film transistors


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