Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology

Hyunki Jung; Dzuhri Radityo Utomo; Saebyeok Shin; Seok Kyun Han; Sang Gug Lee; Jusung Kim

doi:10.1109/ISOCC.2018.8649986

Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology

Hyunki Jung, Dzuhri Radityo Utomo, Saebyeok Shin, Seok Kyun Han, Sang Gug Lee, Jusung Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm² active area.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference 2018, ISOCC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	105-106
Number of pages	2
ISBN (Electronic)	9781538679609
DOIs	https://doi.org/10.1109/ISOCC.2018.8649986
State	Published - 2 Jul 2018
Event	15th International SoC Design Conference, ISOCC 2018 - Daegu, Korea, Republic of Duration: 12 Nov 2018 → 15 Nov 2018

Publication series

Name	Proceedings - International SoC Design Conference 2018, ISOCC 2018

Conference

Conference	15th International SoC Design Conference, ISOCC 2018
Country/Territory	Korea, Republic of
City	Daegu
Period	12/11/18 → 15/11/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Frequency channelization receiver
Ka-band
Series peaking inductor
Stagger tunning

Access to Document

10.1109/ISOCC.2018.8649986

Cite this

Jung, H., Utomo, D. R., Shin, S., Han, S. K., Lee, S. G., & Kim, J. (2018). Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology. In Proceedings - International SoC Design Conference 2018, ISOCC 2018 (pp. 105-106). Article 8649986 (Proceedings - International SoC Design Conference 2018, ISOCC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2018.8649986

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title = "Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology",

abstract = "This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm2 active area.",

keywords = "Frequency channelization receiver, Ka-band, Series peaking inductor, Stagger tunning",

author = "Hyunki Jung and Utomo, \{Dzuhri Radityo\} and Saebyeok Shin and Han, \{Seok Kyun\} and Lee, \{Sang Gug\} and Jusung Kim",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 15th International SoC Design Conference, ISOCC 2018 ; Conference date: 12-11-2018 Through 15-11-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/ISOCC.2018.8649986",

language = "English",

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Jung, H, Utomo, DR, Shin, S, Han, SK, Lee, SG & Kim, J 2018, Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology. in Proceedings - International SoC Design Conference 2018, ISOCC 2018., 8649986, Proceedings - International SoC Design Conference 2018, ISOCC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 105-106, 15th International SoC Design Conference, ISOCC 2018, Daegu, Korea, Republic of, 12/11/18. https://doi.org/10.1109/ISOCC.2018.8649986

Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology. / Jung, Hyunki; Utomo, Dzuhri Radityo; Shin, Saebyeok et al.
Proceedings - International SoC Design Conference 2018, ISOCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 105-106 8649986 (Proceedings - International SoC Design Conference 2018, ISOCC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Shin, Saebyeok

AU - Han, Seok Kyun

AU - Lee, Sang Gug

AU - Kim, Jusung

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N2 - This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm2 active area.

AB - This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm2 active area.

KW - Frequency channelization receiver

KW - Ka-band

KW - Series peaking inductor

KW - Stagger tunning

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BT - Proceedings - International SoC Design Conference 2018, ISOCC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th International SoC Design Conference, ISOCC 2018

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Jung H, Utomo DR, Shin S, Han SK, Lee SG, Kim J. Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology. In Proceedings - International SoC Design Conference 2018, ISOCC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 105-106. 8649986. (Proceedings - International SoC Design Conference 2018, ISOCC 2018). doi: 10.1109/ISOCC.2018.8649986

Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology

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Keywords

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