Investigation on resistive memory switching mechanism of NiO

D. C. Kim, S. Seo, D. S. Suh, R. Jung, C. W. Lee, J. K. Shin, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, C. W. Lee, S. O. Park, H. S. Kim, U. I. Chung, J. T. Moon, B. I. Ryu, J. S. Kim, B. H. Park

Research output: Contribution to journalArticlepeer-review


Experimental investigations on the resistive memory switching in sub-micron sized NiO memory cell are presented to elucidate the resistive memory switching mechanism. The voltage or current-biased I-V measurements show that the resistive switching transitions can be regarded as the combination of a voltage-controlled negative differential resistance phenomenon and a current-controlled negative differential resistance phenomenon. Along with experimental observations of multiple resistance states, these indicate that the memory switching in NiO would come from the percolative formation and rupture of filamentary conducting paths. Pulse experiments further suggest that the memory switching would come from local domains inside filaments.

Original languageEnglish
Pages (from-to)90-97
Number of pages8
JournalIntegrated Ferroelectrics
Issue number1
StatePublished - Sep 2007


  • Filament
  • Negative differential resistance
  • NiO
  • Pulse
  • Resistive memory switching


Dive into the research topics of 'Investigation on resistive memory switching mechanism of NiO'. Together they form a unique fingerprint.

Cite this