Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM

Kyungho Hong; Kyung Kyu Min; Min Hwi Kim; Suhyun Bang; Tae Hyeon Kim; Dong Keun Lee; Yeon Joon Choi; Chae Soo Kim; Jae Yoon Lee; Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.1109/TED.2020.2976106

Investigation of the Thermal Recovery from Reset Breakdown of a SiN_x-Based RRAM

Kyungho Hong, Kyung Kyu Min, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiN_x-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiN_x RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

Original language	English
Article number	9031742
Pages (from-to)	1600-1605
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	4
DOIs	https://doi.org/10.1109/TED.2020.2976106
State	Published - 1 Apr 2020

Bibliographical note

Funding Information:
Manuscript received January 21, 2020; accepted February 20, 2020. Date of publication March 10, 2020; date of current version March 24, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) under Grant 2018R1A2A1A05023517 and in part by the Brain Korea 21 Plus Project. The review of this article was arranged by Editor J. Kang. (Corresponding author: Byung-Gook Park.) Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, and Byung-Gook Park are with the Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea (e-mail: [email protected]).

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Negative set
Reset breakdown
Resistiveswitching random access memory (RRAM)
Si-rich nitride (SiN)
Thermal recovery

Access to Document

10.1109/TED.2020.2976106

Cite this

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title = "Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM",

abstract = "In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.",

keywords = "Negative set, Reset breakdown, Resistiveswitching random access memory (RRAM), Si-rich nitride (SiN), Thermal recovery",

author = "Kyungho Hong and Min, {Kyung Kyu} and Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Choi, {Yeon Joon} and Kim, {Chae Soo} and Lee, {Jae Yoon} and Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",

note = "Funding Information: Manuscript received January 21, 2020; accepted February 20, 2020. Date of publication March 10, 2020; date of current version March 24, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) under Grant 2018R1A2A1A05023517 and in part by the Brain Korea 21 Plus Project. The review of this article was arranged by Editor J. Kang. (Corresponding author: Byung-Gook Park.) Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, and Byung-Gook Park are with the Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea (e-mail: [email protected]). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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AU - Lee, Dong Keun

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AU - Kim, Sungjun

AU - Cho, Seongjae

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N2 - In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

AB - In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

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