Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM

Kyungho Hong, Kyung Kyu Min, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

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In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

Original languageEnglish
Article number9031742
Pages (from-to)1600-1605
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number4
StatePublished - 1 Apr 2020


  • Negative set
  • Reset breakdown
  • Resistiveswitching random access memory (RRAM)
  • Si-rich nitride (SiN)
  • Thermal recovery


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