Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

A unique characteristic of hot electron injection from the source side in a dopant-segregated Schottky barrier (DSSB) metal-oxide-semiconductor field-effect-transistor is investigated. A hot electron injection triggered by the sharp energy band bending near the source-side Schottky barrier is verified by the charge pumping method with numerical device simulations. With the aid of the charge pumping method, the lateral distribution of interface traps generated by injected hot electrons is analyzed. The results provide a guideline for the optimization of programming and erase operations in DSSB devices.