Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho; In Mankang; Kyung Rok Kim

doi:10.1587/elex.7.1499

Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho
, In Mankang
, Kyung Rok Kim

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.

Original language	English
Pages (from-to)	1499-1503
Number of pages	5
Journal	IEICE Electronics Express
Volume	7
Issue number	19
DOIs	https://doi.org/10.1587/elex.7.1499
State	Published - 10 Oct 2010

Keywords

Model
Silicon nanowire
Source-to-drain capacitance

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title = "Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs",

abstract = "We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.",

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journal = "IEICE Electronics Express",

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T1 - Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

AU - Cho, Seongjae

AU - Mankang, In

AU - Kim, Kyung Rok

PY - 2010/10/10

Y1 - 2010/10/10

N2 - We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.

AB - We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.

KW - Model

KW - Silicon nanowire

KW - Source-to-drain capacitance

UR - https://www.scopus.com/pages/publications/77958169171

U2 - 10.1587/elex.7.1499

DO - 10.1587/elex.7.1499

M3 - Article

AN - SCOPUS:77958169171

SN - 1349-2543

VL - 7

SP - 1499

EP - 1503

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 19

ER -

Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Abstract

Keywords

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