Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho; In Mankang; Kyung Rok Kim

doi:10.1587/elex.7.1499

Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho, In Mankang, Kyung Rok Kim

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.

Original language	English
Pages (from-to)	1499-1503
Number of pages	5
Journal	IEICE Electronics Express
Volume	7
Issue number	19
DOIs	https://doi.org/10.1587/elex.7.1499
State	Published - 10 Oct 2010

Keywords

Model
Silicon nanowire
Source-to-drain capacitance

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@article{aaef5e6821984a419f9f5071551e0117,

title = "Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs",

abstract = "We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.",

keywords = "Model, Silicon nanowire, Source-to-drain capacitance",

author = "Seongjae Cho and In Mankang and Kim, {Kyung Rok}",

year = "2010",

month = oct,

day = "10",

doi = "10.1587/elex.7.1499",

language = "English",

volume = "7",

pages = "1499--1503",

journal = "IEICE Electronics Express",

issn = "1349-2543",

publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",

number = "19",

}

TY - JOUR

T1 - Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

AU - Cho, Seongjae

AU - Mankang, In

AU - Kim, Kyung Rok

PY - 2010/10/10

Y1 - 2010/10/10

N2 - We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.

AB - We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.

KW - Model

KW - Silicon nanowire

KW - Source-to-drain capacitance

UR - http://www.scopus.com/inward/record.url?scp=77958169171&partnerID=8YFLogxK

U2 - 10.1587/elex.7.1499

DO - 10.1587/elex.7.1499

M3 - Article

AN - SCOPUS:77958169171

SN - 1349-2543

VL - 7

SP - 1499

EP - 1503

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 19

ER -

Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

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Keywords

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