Investigation of retention characteristics caused by charge loss for charge trap NAND flash memory

Seunghyun Kim, Sang Ho Lee, Sang Ku Park, Youngmin Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this paper, we investigate the retention characteristics cause by loss of trapped charges in charge-trap NAND flash memory. We fabricated silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices having different widths and lengths for setting up a more accurate retention model. For higher accuracy in the measurement results, we have set up a fast-response measurement scheme to have a closer look at the retention characteristics, using a waveform generator and a fast-measurement unit. Drain current can be measurement immediately after a program operation with a μs-level resolution. Transient analysis on the retention characteristics over a very short time period is performed along with the long-time measurement results. As the result, a more succinct set of clues for understanding the initial charge loss and the charge redistribution are provided.

Original languageEnglish
Pages (from-to)584-590
Number of pages7
JournalJournal of Semiconductor Technology and Science
Issue number5
StatePublished - Oct 2017


  • Charge loss
  • Charge-trap flash
  • NAND
  • Retention
  • Transient analysis


Dive into the research topics of 'Investigation of retention characteristics caused by charge loss for charge trap NAND flash memory'. Together they form a unique fingerprint.

Cite this