Investigation of power dissipation for ReRAM in crossbar array architecture

Wookyung Sun; Hyein Lim; Hyungsoon Shin; Wootae Lee

doi:10.1109/NVMTS.2014.7060847

Investigation of power dissipation for ReRAM in crossbar array architecture

Wookyung Sun, Hyein Lim, Hyungsoon Shin, Wootae Lee

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1∼2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about V_dd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.

Original language	English
Title of host publication	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479942039
DOIs	https://doi.org/10.1109/NVMTS.2014.7060847
State	Published - 13 Mar 2015
Event	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 - Jeju Island, Korea, Republic of Duration: 27 Oct 2014 → 29 Oct 2014

Publication series

Name	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

Conference

Conference	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Country/Territory	Korea, Republic of
City	Jeju Island
Period	27/10/14 → 29/10/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

crossbar array
power dissipation
ReRAM

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10.1109/NVMTS.2014.7060847

Cite this

Sun, W., Lim, H., Shin, H., & Lee, W. (2015). Investigation of power dissipation for ReRAM in crossbar array architecture. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 Article 7060847 (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NVMTS.2014.7060847

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title = "Investigation of power dissipation for ReRAM in crossbar array architecture",

abstract = "Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1∼2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.",

keywords = "crossbar array, power dissipation, ReRAM",

author = "Wookyung Sun and Hyein Lim and Hyungsoon Shin and Wootae Lee",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 ; Conference date: 27-10-2014 Through 29-10-2014",

year = "2015",

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day = "13",

doi = "10.1109/NVMTS.2014.7060847",

language = "English",

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Sun, W, Lim, H, Shin, H & Lee, W 2015, Investigation of power dissipation for ReRAM in crossbar array architecture. in 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014., 7060847, 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Institute of Electrical and Electronics Engineers Inc., 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Jeju Island, Korea, Republic of, 27/10/14. https://doi.org/10.1109/NVMTS.2014.7060847

Investigation of power dissipation for ReRAM in crossbar array architecture. / Sun, Wookyung; Lim, Hyein; Shin, Hyungsoon et al.
2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7060847 (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Shin, Hyungsoon

AU - Lee, Wootae

PY - 2015/3/13

Y1 - 2015/3/13

N2 - Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1∼2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.

AB - Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1∼2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.

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Y2 - 27 October 2014 through 29 October 2014

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Investigation of power dissipation for ReRAM in crossbar array architecture

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