Investigation of modified 1t dram with twin gate tunneling field effect transistor for improved retention characteristics

Dong Chang Han, Deok Jin Jang, Jae Yoon Lee, Seongjae Cho, Il Hwan Cho

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

This paper proposes a one transistor dynamic random access memory (1T DRAM) with localized partial insulator (LPI) to increase data retention time. Proposed 1T DRAM cell is based on twin gate tunneling field effect transistor (TGTFET) and has improved retention characteristics with LPI. The LPI inhibit stored carrier movement with high energy barrier. Key process sequence is suggested and device optimizations with parameter variation are also investigated with device simulation. As the barrier length increases, retention characteristics can be improved but also it causes a decrease in the read 1 current. An increase in LPI length within the appropriate range is required in the proposed 1T DRAM.

Original languageEnglish
Pages (from-to)145-150
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume20
Issue number2
DOIs
StatePublished - Apr 2020

Bibliographical note

Funding Information:
This work wasupportedbytheMinistry ofTrade, Industry and Economy of Korea (MOTIE) with the Korean Semiconductor Research Consortium (KSRC) through the program for development of future semiconductor devices (Grant No. 10080513) and was also supported 2019 Research Fund of Myongji University.

Publisher Copyright:
© 2020, Institute of Electronics Engineers of Korea. All rights reserved.

Keywords

  • 1T DRAM
  • Localized partial insulator (LPI)
  • Reliability
  • Tunnel FET (TFET)

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