Investigation and optimization of double-gate MPI 1T DRAM with gate-induced drain leakage operation

In this paper, we propose a double-gate one-transistor dynamic random-access memory (1T DRAM) with middle partial insulation (MPI) structure for low power application. Low power operation with the gate-induced drain leakage (GIDL) programming method can be obtained while maintaining the original advantages of MPI 1TDRAM. The optimization of the MPI 1T-DRAM device for the GIDL method is investigated with technology computer-aided design (TCAD). High current ratio and low power consumption are obtained from the proposed 1T-DRAM device. Optimal device design in terms of barrier insulator length and fin width have been carried out for improvements of device performances and reliability.