Abstract
We propose a viable route for interstitial-mediated formation of arsenic-vacancy clusters that are primarily responsible for arsenic deactivation in the fabrication of ultrashallow junctions in Si, based on first-principles density functional calculations for the stability of arsenic-defect clusters. We present the atomic structures and binding energies of newly identified neutral arsenic-interstitial complexes (Asm In, m6 and n3), with comparison to the energetics of arsenic-vacancy complexes (Asm Vn, m6 and n2). Based on these results, we discuss the relative role of interstitials and vacancies in arsenic deactivation during ultrashallow junction formation.
| Original language | English |
|---|---|
| Pages (from-to) | 354-357 |
| Number of pages | 4 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 9 |
| Issue number | 12 |
| DOIs | |
| State | Published - 2006 |