Interstitial-mediated arsenic clustering in ultrashallow junction formation

Scott A. Harrison, Thomas F. Edgar, Gyeong S. Hwang

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


We propose a viable route for interstitial-mediated formation of arsenic-vacancy clusters that are primarily responsible for arsenic deactivation in the fabrication of ultrashallow junctions in Si, based on first-principles density functional calculations for the stability of arsenic-defect clusters. We present the atomic structures and binding energies of newly identified neutral arsenic-interstitial complexes (Asm In, m6 and n3), with comparison to the energetics of arsenic-vacancy complexes (Asm Vn, m6 and n2). Based on these results, we discuss the relative role of interstitials and vacancies in arsenic deactivation during ultrashallow junction formation.

Original languageEnglish
Pages (from-to)354-357
Number of pages4
JournalElectrochemical and Solid-State Letters
Issue number12
StatePublished - 2006


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