Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Kimoon Lee; Min Suk Oh; Sung Jin Mun; Kwang H. Lee; Tae Woo Ha; Jae Hoon Kim; Sang Hee Ko Park; Chi Sun Hwang; Byoung H. Lee; Myung M. Sung; Seongil Im

doi:10.1002/adma.201000722

Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Kimoon Lee, Min Suk Oh, Sung Jin Mun, Kwang H. Lee, Tae Woo Ha, Jae Hoon Kim, Sang Hee Ko Park, Chi Sun Hwang, Byoung H. Lee, Myung M. Sung, Seongil Im

Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

Original language	English
Pages (from-to)	3260-3265
Number of pages	6
Journal	Advanced Materials
Volume	22
Issue number	30
DOIs	https://doi.org/10.1002/adma.201000722
State	Published - 10 Aug 2010

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title = "Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy",

abstract = "Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)",

author = "Kimoon Lee and Oh, {Min Suk} and Mun, {Sung Jin} and Lee, {Kwang H.} and Ha, {Tae Woo} and Kim, {Jae Hoon} and Park, {Sang Hee Ko} and Hwang, {Chi Sun} and Lee, {Byoung H.} and Sung, {Myung M.} and Seongil Im",

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day = "10",

doi = "10.1002/adma.201000722",

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AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Mun, Sung Jin

AU - Lee, Kwang H.

AU - Ha, Tae Woo

AU - Kim, Jae Hoon

AU - Park, Sang Hee Ko

AU - Hwang, Chi Sun

AU - Lee, Byoung H.

AU - Sung, Myung M.

AU - Im, Seongil

PY - 2010/8/10

Y1 - 2010/8/10

N2 - Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

AB - Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

UR - http://www.scopus.com/inward/record.url?scp=77955399765&partnerID=8YFLogxK

U2 - 10.1002/adma.201000722

DO - 10.1002/adma.201000722

M3 - Article

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AN - SCOPUS:77955399765

VL - 22

SP - 3260

EP - 3265

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 30

ER -

Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Abstract

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