Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)