Abstract
Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)
Original language | English |
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Pages (from-to) | 3260-3265 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 30 |
DOIs | |
State | Published - 10 Aug 2010 |