Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

S. H. Phark; R. Jung; Y. J. Chang; T. W. Noh; D. W. Kim

doi:10.1063/1.3072800

Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

S. H. Phark, R. Jung, Y. J. Chang, T. W. Noh, D. W. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.

Original language	English
Article number	022906
Journal	Applied Physics Letters
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.3072800
State	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the KRF Grant (Grant No. KRF-2008-314-C00094) and Nano R&D program through KOSEF funded by MEST (Grant No. 2008-02557). S.H.P. and T.W.N. were supported by the Creative Research Initiatives of KOSEF. R.J. was supported by the Research Grant of Kwangwoon University in 2008.

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title = "Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures",

abstract = "Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.",

author = "Phark, {S. H.} and R. Jung and Chang, {Y. J.} and Noh, {T. W.} and Kim, {D. W.}",

note = "Funding Information: This work was supported by the KRF Grant (Grant No. KRF-2008-314-C00094) and Nano R&D program through KOSEF funded by MEST (Grant No. 2008-02557). S.H.P. and T.W.N. were supported by the Creative Research Initiatives of KOSEF. R.J. was supported by the Research Grant of Kwangwoon University in 2008.",

year = "2009",

doi = "10.1063/1.3072800",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

AU - Phark, S. H.

AU - Jung, R.

AU - Chang, Y. J.

AU - Noh, T. W.

AU - Kim, D. W.

N1 - Funding Information: This work was supported by the KRF Grant (Grant No. KRF-2008-314-C00094) and Nano R&D program through KOSEF funded by MEST (Grant No. 2008-02557). S.H.P. and T.W.N. were supported by the Creative Research Initiatives of KOSEF. R.J. was supported by the Research Grant of Kwangwoon University in 2008.

PY - 2009

Y1 - 2009

N2 - Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.

AB - Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.

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DO - 10.1063/1.3072800

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022906

ER -

Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

Abstract

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