Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

S. H. Phark, R. Jung, Y. J. Chang, T. W. Noh, D. W. Kim

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Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.

Original languageEnglish
Article number022906
JournalApplied Physics Letters
Issue number2
StatePublished - 2009

Bibliographical note

Funding Information:
This work was supported by the KRF Grant (Grant No. KRF-2008-314-C00094) and Nano R&D program through KOSEF funded by MEST (Grant No. 2008-02557). S.H.P. and T.W.N. were supported by the Creative Research Initiatives of KOSEF. R.J. was supported by the Research Grant of Kwangwoon University in 2008.


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