Interface-trap analysis by an optically assisted charge-pumping technique in a floating-body device

Sungho Kim, Sung Jin Choi, Yang Kyu Choi

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.

Original languageEnglish
Article number5629429
Pages (from-to)84-86
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number1
DOIs
StatePublished - Jan 2011

Keywords

  • Charge pumping
  • floating-body (FB)
  • interface trap
  • silicon-on-insulator MOS field-effect transistor (FET)

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