Abstract
An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.
Original language | English |
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Article number | 5629429 |
Pages (from-to) | 84-86 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2011 |
Keywords
- Charge pumping
- floating-body (FB)
- interface trap
- silicon-on-insulator MOS field-effect transistor (FET)