Interface resistance switching characteristics of metal/Nb-doped SrTiO 3 junctions

Chanwoo Park; Dong Wook Kim

doi:10.3938/jkps.50.1294

Interface resistance switching characteristics of metal/Nb-doped SrTiO ₃ junctions

Chanwoo Park
, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report on the transport properties of junctions consisting of metal electrodes (M = Ti, Ni, and Pt) and (001)-oriented Nb-doped SrTiO₃ (Nb:STO) single crystals. The junctions with M = Ti, which had a shallow work function, exhibited linear current-voltage (I-V) characteristics without hysteresis. For M = Ni and Pt, with a large work function, the junctions showed rectifying I-V characteristics and notable hysteresis upon polarity reversal. The resistance change ratio for M = Ni (Pt) did (not) depend on the doping ratio of Nb:STO. This clearly suggests that the metal work function may not be sufficient to explain the resistance switching.

Original language	English
Pages (from-to)	1294-1297
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	5
DOIs	https://doi.org/10.3938/jkps.50.1294
State	Published - May 2007

Keywords

Junction
Resistance switching

Access to Document

10.3938/jkps.50.1294

Cite this

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title = "Interface resistance switching characteristics of metal/Nb-doped SrTiO 3 junctions",

abstract = "We report on the transport properties of junctions consisting of metal electrodes (M = Ti, Ni, and Pt) and (001)-oriented Nb-doped SrTiO3 (Nb:STO) single crystals. The junctions with M = Ti, which had a shallow work function, exhibited linear current-voltage (I-V) characteristics without hysteresis. For M = Ni and Pt, with a large work function, the junctions showed rectifying I-V characteristics and notable hysteresis upon polarity reversal. The resistance change ratio for M = Ni (Pt) did (not) depend on the doping ratio of Nb:STO. This clearly suggests that the metal work function may not be sufficient to explain the resistance switching.",

keywords = "Junction, Resistance switching",

author = "Chanwoo Park and Kim, \{Dong Wook\}",

year = "2007",

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language = "English",

volume = "50",

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T1 - Interface resistance switching characteristics of metal/Nb-doped SrTiO 3 junctions

AU - Park, Chanwoo

AU - Kim, Dong Wook

PY - 2007/5

Y1 - 2007/5

N2 - We report on the transport properties of junctions consisting of metal electrodes (M = Ti, Ni, and Pt) and (001)-oriented Nb-doped SrTiO3 (Nb:STO) single crystals. The junctions with M = Ti, which had a shallow work function, exhibited linear current-voltage (I-V) characteristics without hysteresis. For M = Ni and Pt, with a large work function, the junctions showed rectifying I-V characteristics and notable hysteresis upon polarity reversal. The resistance change ratio for M = Ni (Pt) did (not) depend on the doping ratio of Nb:STO. This clearly suggests that the metal work function may not be sufficient to explain the resistance switching.

AB - We report on the transport properties of junctions consisting of metal electrodes (M = Ti, Ni, and Pt) and (001)-oriented Nb-doped SrTiO3 (Nb:STO) single crystals. The junctions with M = Ti, which had a shallow work function, exhibited linear current-voltage (I-V) characteristics without hysteresis. For M = Ni and Pt, with a large work function, the junctions showed rectifying I-V characteristics and notable hysteresis upon polarity reversal. The resistance change ratio for M = Ni (Pt) did (not) depend on the doping ratio of Nb:STO. This clearly suggests that the metal work function may not be sufficient to explain the resistance switching.

KW - Junction

KW - Resistance switching

UR - https://www.scopus.com/pages/publications/34250173857

U2 - 10.3938/jkps.50.1294

DO - 10.3938/jkps.50.1294

M3 - Article

AN - SCOPUS:34250173857

SN - 0374-4884

VL - 50

SP - 1294

EP - 1297

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 5