Interface resistance switching characteristics of metal/Nb-doped SrTiO 3 junctions

Chanwoo Park, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We report on the transport properties of junctions consisting of metal electrodes (M = Ti, Ni, and Pt) and (001)-oriented Nb-doped SrTiO3 (Nb:STO) single crystals. The junctions with M = Ti, which had a shallow work function, exhibited linear current-voltage (I-V) characteristics without hysteresis. For M = Ni and Pt, with a large work function, the junctions showed rectifying I-V characteristics and notable hysteresis upon polarity reversal. The resistance change ratio for M = Ni (Pt) did (not) depend on the doping ratio of Nb:STO. This clearly suggests that the metal work function may not be sufficient to explain the resistance switching.

Original languageEnglish
Pages (from-to)1294-1297
Number of pages4
JournalJournal of the Korean Physical Society
Issue number5
StatePublished - May 2007


  • Junction
  • Resistance switching


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