Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Deung Jang Choi; Nyun Jong Lee; Tae Hee Kim

doi:10.4283/JMAG.2010.15.4.185

Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Deung Jang Choi
, Nyun Jong Lee
, Tae Hee Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

Original language	English
Pages (from-to)	185-189
Number of pages	5
Journal	Journal of Magnetics
Volume	15
Issue number	4
DOIs	https://doi.org/10.4283/JMAG.2010.15.4.185
State	Published - Dec 2010

Keywords

EuO
Organic spintronics
Rubrene
Spin filter

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10.4283/JMAG.2010.15.4.185

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title = "Interface engineering in quasi-magnetic tunnel junctions with an organic barrier",

abstract = "Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99\% measured at 4 K. However, a magnetoresistance (MR) value of 9\% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.",

keywords = "EuO, Organic spintronics, Rubrene, Spin filter",

author = "Choi, \{Deung Jang\} and Lee, \{Nyun Jong\} and Kim, \{Tae Hee\}",

year = "2010",

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doi = "10.4283/JMAG.2010.15.4.185",

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pages = "185--189",

journal = "Journal of Magnetics",

issn = "1226-1750",

publisher = "Seoul National University 501-321",

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TY - JOUR

T1 - Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

AU - Choi, Deung Jang

AU - Lee, Nyun Jong

AU - Kim, Tae Hee

PY - 2010/12

Y1 - 2010/12

N2 - Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

AB - Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

KW - EuO

KW - Organic spintronics

KW - Rubrene

KW - Spin filter

UR - https://www.scopus.com/pages/publications/78751487372

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DO - 10.4283/JMAG.2010.15.4.185

M3 - Article

AN - SCOPUS:78751487372

SN - 1226-1750

VL - 15

SP - 185

EP - 189

JO - Journal of Magnetics

JF - Journal of Magnetics

IS - 4

ER -

Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Abstract

Keywords

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