Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Deung Jang Choi, Nyun Jong Lee, Tae Hee Kim

Research output: Contribution to journalArticlepeer-review


Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

Original languageEnglish
Pages (from-to)185-189
Number of pages5
JournalJournal of Magnetics
Issue number4
StatePublished - Dec 2010


  • EuO
  • Organic spintronics
  • Rubrene
  • Spin filter


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