Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Deung Jang Choi; Nyun Jong Lee; Tae Hee Kim

doi:10.4283/JMAG.2010.15.4.185

Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Deung Jang Choi, Nyun Jong Lee, Tae Hee Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

Original language	English
Pages (from-to)	185-189
Number of pages	5
Journal	Journal of Magnetics
Volume	15
Issue number	4
DOIs	https://doi.org/10.4283/JMAG.2010.15.4.185
State	Published - Dec 2010

Keywords

EuO
Organic spintronics
Rubrene
Spin filter

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10.4283/JMAG.2010.15.4.185

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title = "Interface engineering in quasi-magnetic tunnel junctions with an organic barrier",

abstract = "Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.",

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author = "Choi, {Deung Jang} and Lee, {Nyun Jong} and Kim, {Tae Hee}",

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AU - Choi, Deung Jang

AU - Lee, Nyun Jong

AU - Kim, Tae Hee

PY - 2010/12

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N2 - Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

AB - Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

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Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

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Keywords

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