Interedge tunneling in quantum Hall line junctions

Eun Ah Kim, Eduardo Fradkin

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We propose a scenario to understand the puzzling features of the recent experiment by Kang and co-workers on tunneling between laterally coupled quantum Hall liquids by modeling the system as a pair of coupled chiral Luttinger liquids with a point contact tunneling center. We show that for filling factors (formula presented) the effects of the Coulomb interactions move the system deep into the strong-tunneling regime, by reducing the magnitude of the Luttinger parameter K, leading to the appearance of a zero-bias differential conductance peak of magnitude (formula presented) at zero temperature. The abrupt appearance of the zero-bias peak as the filling factor is increased past a value (formula presented) and its gradual disappearance thereafter can be understood as a crossover controlled by the main energy scales of this system: the bias voltage V, the crossover scale (formula presented) and the temperature T. The low height of the zero-bias peak (formula presented) observed in the experiment and its broad finite width can be understood naturally within this picture. Also, the abrupt reappearance of the zero-bias peak for (formula presented) can be explained as an effect caused by spin-reversed electrons, i.e., if the 2DEG is assumed to have a small polarization near (formula presented) We also predict that as the temperature is lowered (formula presented) should decrease, and the width of the zero-bias peak should become wider. This picture also predicts the existence of a similar zero-bias peak in the spin tunneling conductance near for (formula presented).

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number4
DOIs
StatePublished - 23 Jan 2003

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