Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

Scott A. Harrison, Thomas F. Edgar, Gyeong S. Hwang

Research output: Contribution to conferencePaperpeer-review

Abstract

Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As 2V, As 3V, and AS 4V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.

Original languageEnglish
Pages120-126
Number of pages7
StatePublished - 2004
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 10 May 200412 May 2004

Conference

ConferenceAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Country/TerritoryUnited States
CitySan Antonio, TX
Period10/05/0412/05/04

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