Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

Scott A. Harrison; Thomas F. Edgar; Gyeong S. Hwang

Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

Scott A. Harrison, Thomas F. Edgar, Gyeong S. Hwang

Research output: Contribution to conference › Paper › peer-review

Abstract

Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As ₂V, As ₃V, and AS ₄V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As _nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.

Original language	English
Pages	120-126
Number of pages	7
State	Published - 2004
Event	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 10 May 2004 → 12 May 2004

Conference

Conference	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	10/05/04 → 12/05/04

Cite this

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title = "Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon",

abstract = "Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As 2V, As 3V, and AS 4V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.",

author = "Harrison, {Scott A.} and Edgar, {Thomas F.} and Hwang, {Gyeong S.}",

year = "2004",

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pages = "120--126",

note = "null ; Conference date: 10-05-2004 Through 12-05-2004",

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Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon. / Harrison, Scott A.; Edgar, Thomas F.; Hwang, Gyeong S.

2004. 120-126 Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

AU - Harrison, Scott A.

AU - Edgar, Thomas F.

AU - Hwang, Gyeong S.

PY - 2004

Y1 - 2004

N2 - Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As 2V, As 3V, and AS 4V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.

AB - Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As 2V, As 3V, and AS 4V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.

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M3 - Paper

AN - SCOPUS:5744253449

SP - 120

EP - 126

Y2 - 10 May 2004 through 12 May 2004

ER -

Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

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