Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As 2V, As 3V, and AS 4V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.
|Number of pages||7|
|State||Published - 2004|
|Event||Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States|
Duration: 10 May 2004 → 12 May 2004
|Conference||Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium|
|City||San Antonio, TX|
|Period||10/05/04 → 12/05/04|