Abstract
Arsenic deactivation and arsenic transient enhanced diffusion (TED) have emerged as key issues in the formation of As-doped ultrashallow junctions. Arsenic-monovacancy clusters such as AsV, As 2V, As 3V, and AS 4V have been proposed to play a key role in these phenomena. Using density functional theory calculations, we examine the interaction of interstitials with small arsenic-vacancy complexes. We find that the vacancy of As nV (n=1-4) complexes is easily annihilated by interstitial-vacancy recombination, with very low barriers of ≤ 0.13 eV. This suggests that interstitials may play a larger role in As TED and As deactivation than previously believed.
Original language | English |
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Pages | 120-126 |
Number of pages | 7 |
State | Published - 2004 |
Event | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 10 May 2004 → 12 May 2004 |
Conference
Conference | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium |
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Country/Territory | United States |
City | San Antonio, TX |
Period | 10/05/04 → 12/05/04 |