Integrated atomistic modelling of interstitial defect growth in silicon

Engineering

• Extended Defect 100%
• Atomistic Modeling 100%
• Crystalline Silicon 50%
• Growth Behavior 50%
• Native Defect 50%
• Cluster Size 50%
• Aspect Ratio 50%

Physics

• Interstitial Defect 100%
• Monte Carlo 50%
• Nucleation 50%
• Transmission Electron Microscopy 50%
• Aspect Ratio 50%

Material Science

• Interstitial Defect 100%
• Density 50%
• Nucleation 50%
• Transmission Electron Microscopy 50%