Abstract
An injection-locked frequency divider topology for wide locking-range and high-order division is presented. Based on the theoretical analysis of the locking-range and injection locking characteristic, we propose locking-range enhancement techniques and high-order dividing topology. Fabricated in a 0.18- μm BiCMOS process, three test circuits are designed with only a standard CMOS, aiming at input frequency ranges of 7.8, 11.1, and 11.7 GHz. The 7.8-GHz divide-by-2 ILFD consumes 2.9 mW with a locking range of 692 MHz operated from a 1.5 V supply. The optimized dual injection method improves the locking range by a factor of 10. The 11.1-GHz divide-by-3 ILFD employs an even-harmonic phase tuning technique and the proposed technique improves the locking range by 25%. The core of the 11.1-GHz ILFD consumes 6.15 mW from a 1.8 V supply. For the 11.7-GHz divide-by-3 ILFD, a self-injection technique is proposed that utilizes harmonic conversion and self-injection to improve phase-noise, locking-range, and input sensitivity simultaneously. By employing harmonic tuning and self-injection, odd-order division is enabled with 47.8% enhancement in the locking-range and 15.7-dBc/Hz reduction in phase noise.
| Original language | English |
|---|---|
| Article number | 7805197 |
| Pages (from-to) | 4410-4417 |
| Number of pages | 8 |
| Journal | IEEE Access |
| Volume | 5 |
| DOIs | |
| State | Published - 2017 |
Bibliographical note
Publisher Copyright:© 2013 IEEE.
Keywords
- Frequency divider
- Injection-locking
- Locking-range
- Phase noise
- Self-injection
- Sensitivity