We investigated the temperature-dependent transport properties of Pt/Nb-doped SrTiO3 junctions, exhibiting rectifying and hysteretic behaviours. The conventional Schottky diode model failed to explain the current-voltage characteristics, since the estimated Richardson constant was too small. The temperature dependence of the barrier height and the ideality factor showed that the inhomogeneous barrier model described the experimental data well. The estimated interfacial potential fluctuation was dependent on the resistance states. This suggested that the spatial inhomogeneity could affect the resistive switching phenomena.