InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

Sungjoon Kim; Seongjae Cho; Jaedeok Jeong; Sungjun Kim; Sungmin Hwang; Garam Kim; Sukho Yoon; Byung Gook Park

doi:10.1364/OE.25.006440

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm². Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Original language	English
Pages (from-to)	6440-6449
Number of pages	10
Journal	Optics Express
Volume	25
Issue number	6
DOIs	https://doi.org/10.1364/OE.25.006440
State	Published - 20 Mar 2017

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© 2017 Optical Society of America.

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title = "InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation",

abstract = "The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.",

author = "Sungjoon Kim and Seongjae Cho and Jaedeok Jeong and Sungjun Kim and Sungmin Hwang and Garam Kim and Sukho Yoon and Park, {Byung Gook}",

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T1 - InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

AU - Kim, Sungjoon

AU - Cho, Seongjae

AU - Jeong, Jaedeok

AU - Kim, Sungjun

AU - Hwang, Sungmin

AU - Kim, Garam

AU - Yoon, Sukho

AU - Park, Byung Gook

PY - 2017/3/20

Y1 - 2017/3/20

N2 - The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

AB - The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

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ER -

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

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