InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v

Kyung Rok Kim; Young Jun Yoon; Seongjae Cho; Jae Hwa Seo; Jung Hee Lee; Jin Hyuk Bae; Eou Sik Cho; In Man Kang

doi:10.1016/j.cap.2013.08.013

InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v

Kyung Rok Kim, Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, Jung Hee Lee, Jin Hyuk Bae, Eou Sik Cho, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

An In_0.53Ga_0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (I_on/I_off) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (I_on) of 421 μA/μm, I_on/I _off of 1.2 × 10¹² by design optimization in doping type of In_0.53Ga_0.47As channel at low gate (V _GS) and drain voltages (V_DS) of 0.5 V. Comparable performances are maintained at V_DS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.

Original language	English
Pages (from-to)	2051-2054
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	9
DOIs	https://doi.org/10.1016/j.cap.2013.08.013
State	Published - 2013

Keywords

Current ratio
Heterojunction
High speed
Low operating power
Subthreshold swing
Tunneling field-effect transistor

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10.1016/j.cap.2013.08.013

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@article{8a7581ba16874150a8db7d3aaabc5b0e,

title = "InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v",

abstract = "An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (Ion/Ioff) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (Ion) of 421 μA/μm, Ion/I off of 1.2 × 1012 by design optimization in doping type of In0.53Ga0.47As channel at low gate (V GS) and drain voltages (VDS) of 0.5 V. Comparable performances are maintained at VDS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.",

keywords = "Current ratio, Heterojunction, High speed, Low operating power, Subthreshold swing, Tunneling field-effect transistor",

author = "Kim, {Kyung Rok} and Yoon, {Young Jun} and Seongjae Cho and Seo, {Jae Hwa} and Lee, {Jung Hee} and Bae, {Jin Hyuk} and Cho, {Eou Sik} and Kang, {In Man}",

year = "2013",

doi = "10.1016/j.cap.2013.08.013",

language = "English",

volume = "13",

pages = "2051--2054",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "9",

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TY - JOUR

T1 - InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v

AU - Kim, Kyung Rok

AU - Yoon, Young Jun

AU - Cho, Seongjae

AU - Seo, Jae Hwa

AU - Lee, Jung Hee

AU - Bae, Jin Hyuk

AU - Cho, Eou Sik

AU - Kang, In Man

PY - 2013

Y1 - 2013

N2 - An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (Ion/Ioff) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (Ion) of 421 μA/μm, Ion/I off of 1.2 × 1012 by design optimization in doping type of In0.53Ga0.47As channel at low gate (V GS) and drain voltages (VDS) of 0.5 V. Comparable performances are maintained at VDS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.

AB - An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (Ion/Ioff) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (Ion) of 421 μA/μm, Ion/I off of 1.2 × 1012 by design optimization in doping type of In0.53Ga0.47As channel at low gate (V GS) and drain voltages (VDS) of 0.5 V. Comparable performances are maintained at VDS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.

KW - Current ratio

KW - Heterojunction

KW - High speed

KW - Low operating power

KW - Subthreshold swing

KW - Tunneling field-effect transistor

UR - http://www.scopus.com/inward/record.url?scp=84885086524&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2013.08.013

DO - 10.1016/j.cap.2013.08.013

M3 - Article

AN - SCOPUS:84885086524

SN - 1567-1739

VL - 13

SP - 2051

EP - 2054

JO - Current Applied Physics

JF - Current Applied Physics

IS - 9

ER -

InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v

Abstract

Keywords

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