Influences of interface states on the electrical properties of Pt/SrTiO3 junctions

Sungjoo Lee, Soo Hyon Phark, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.

Original languageEnglish
Pages (from-to)362-365
Number of pages4
JournalJournal of the Korean Physical Society
Volume56
Issue number12
DOIs
StatePublished - 15 Jan 2010

Keywords

  • Junction
  • Resistance switching
  • SrTiO

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