Influences of interface states on the electrical properties of Pt/SrTiO3 junctions

Sungjoo Lee; Soo Hyon Phark; Dong Wook Kim

doi:10.3938/jkps.56.362

Influences of interface states on the electrical properties of Pt/SrTiO₃ junctions

Sungjoo Lee, Soo Hyon Phark, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report on the electrical properties of Pt/Nb-doped SrTiO₃ single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.

Original language	English
Pages (from-to)	362-365
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	12
DOIs	https://doi.org/10.3938/jkps.56.362
State	Published - 15 Jan 2010

Keywords

Junction
Resistance switching
SrTiO

Access to Document

10.3938/jkps.56.362

Cite this

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title = "Influences of interface states on the electrical properties of Pt/SrTiO3 junctions",

abstract = "We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.",

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AU - Phark, Soo Hyon

AU - Kim, Dong Wook

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N2 - We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.

AB - We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.

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KW - SrTiO

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