Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

Gee Yeong Kim; Dae Ho Son; Trang Thi Thu Nguyen; Seokhyun Yoon; Minsu Kwon; Chan Wook Jeon; Dae Hwan Kim; Jin Kyu Kang; William Jo

doi:10.1109/PVSC.2015.7356411

Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

Gee Yeong Kim, Dae Ho Son, Trang Thi Thu Nguyen, Seokhyun Yoon, Minsu Kwon, Chan Wook Jeon, Dae Hwan Kim, Jin Kyu Kang, William Jo

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356411
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Keywords

and photo-conversion efficiency
Cu2ZnSn(S,Se)4
Depth profile
Kelvin probe force microscopy
Raman spectroscopy
Secondary phase

Access to Document

10.1109/PVSC.2015.7356411

Cite this

Kim, G. Y., Son, D. H., Nguyen, T. T. T., Yoon, S., Kwon, M., Jeon, C. W., Kim, D. H., Kang, J. K., & Jo, W. (2015). Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356411] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356411

Kim, Gee Yeong ; Son, Dae Ho ; Nguyen, Trang Thi Thu et al. / Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

@inproceedings{15f292b29b8b4113bd24e8fb43f2e752,

title = "Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process",

abstract = "CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells.",

keywords = "and photo-conversion efficiency, Cu2ZnSn(S,Se)4, Depth profile, Kelvin probe force microscopy, Raman spectroscopy, Secondary phase",

author = "Kim, {Gee Yeong} and Son, {Dae Ho} and Nguyen, {Trang Thi Thu} and Seokhyun Yoon and Minsu Kwon and Jeon, {Chan Wook} and Kim, {Dae Hwan} and Kang, {Jin Kyu} and William Jo",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356411",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

}

Kim, GY, Son, DH, Nguyen, TTT, Yoon, S, Kwon, M, Jeon, CW, Kim, DH, Kang, JK & Jo, W 2015, Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356411, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7356411

Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process. / Kim, Gee Yeong; Son, Dae Ho; Nguyen, Trang Thi Thu et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356411 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

AU - Kim, Gee Yeong

AU - Son, Dae Ho

AU - Nguyen, Trang Thi Thu

AU - Yoon, Seokhyun

AU - Kwon, Minsu

AU - Jeon, Chan Wook

AU - Kim, Dae Hwan

AU - Kang, Jin Kyu

AU - Jo, William

PY - 2015/12/14

Y1 - 2015/12/14

N2 - CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells.

AB - CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells.

KW - and photo-conversion efficiency

KW - Cu2ZnSn(S,Se)4

KW - Depth profile

KW - Kelvin probe force microscopy

KW - Raman spectroscopy

KW - Secondary phase

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DO - 10.1109/PVSC.2015.7356411

M3 - Conference contribution

AN - SCOPUS:84961577136

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Kim GY, Son DH, Nguyen TTT, Yoon S, Kwon M, Jeon CW et al. Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356411. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356411

Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

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