The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 23 Aug 1999|