Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

S. D. Bu; B. H. Park; B. S. Kang; S. H. Kang; T. W. Noh; W. Jo

doi:10.1063/1.124627

Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi₂Ta₂O₉ thin films

S. D. Bu, B. H. Park, B. S. Kang, S. H. Kang, T. W. Noh, W. Jo

Department of Physics

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The electrical properties and microstructure of the pulsed-laser deposited SrBi₂Ta₂O₉ (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO₂/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm².

Original language	English
Pages (from-to)	1155-1157
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.124627
State	Published - 23 Aug 1999

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abstract = "The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.",

author = "Bu, {S. D.} and Park, {B. H.} and Kang, {B. S.} and Kang, {S. H.} and Noh, {T. W.} and W. Jo",

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AU - Noh, T. W.

AU - Jo, W.

PY - 1999/8/23

Y1 - 1999/8/23

N2 - The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.

AB - The electrical properties and microstructure of the pulsed-laser deposited SrBi2Ta2O9 (SBT) ferroelectric thin films were studied as a function of the laser fluence. The thin films were deposited on Pt/Ti/SiO2/Si substrates using a Q-switched Nd:YAG laser. SBT films with good electrical properties were obtained in a narrow laser fluence ranging from 1.0-1.5 J/cm2.

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Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

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Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi₂Ta₂O₉ thin films