Abstract
We investigated both the photovoltaic and transport properties of GaAs based solar cells with and without InAs quantum dots (QDs). In small forward bias region, humps in the local ideality factor are found in the QD-embedded devices at low temperatures. This might be caused by the charges captured in the QD-induced defect states. The temperature dependence of the ideality factor, extracted from large voltage regions, was well explained by the tunneling-mediated interface recombination process. The reverse-bias current also exhibited a signature of trap-mediated tunneling. All these results suggested that the presence of trap states could cause the degraded photovoltaic performance of our QD-embedded solar cells.
Original language | English |
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Pages (from-to) | 192-195 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 14 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2014 |
Bibliographical note
Funding Information:This work was supported by the Agency for Defense Development (ADD) of Republic of Korea , the Converging Research Center Program through the Ministry of Science, ICT and Future Planning Korea ( 2013K000196 ), and internal research program of KIST ( 2E23910 ). H.K. and D.W.K. were also supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant ( 20123010010160 ).
Keywords
- InAs
- Quantum dots
- Solar cell
- Trap states