Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices

Haeri Kim, Moon Ho Park, Sung Jun Park, Ho Sung Kim, Jin Dong Song, Sang Hyuck Kim, Hogyoung Kim, Won Jun Choi, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We investigated both the photovoltaic and transport properties of GaAs based solar cells with and without InAs quantum dots (QDs). In small forward bias region, humps in the local ideality factor are found in the QD-embedded devices at low temperatures. This might be caused by the charges captured in the QD-induced defect states. The temperature dependence of the ideality factor, extracted from large voltage regions, was well explained by the tunneling-mediated interface recombination process. The reverse-bias current also exhibited a signature of trap-mediated tunneling. All these results suggested that the presence of trap states could cause the degraded photovoltaic performance of our QD-embedded solar cells.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalCurrent Applied Physics
Issue number2
StatePublished - Feb 2014

Bibliographical note

Funding Information:
This work was supported by the Agency for Defense Development (ADD) of Republic of Korea , the Converging Research Center Program through the Ministry of Science, ICT and Future Planning Korea ( 2013K000196 ), and internal research program of KIST ( 2E23910 ). H.K. and D.W.K. were also supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant ( 20123010010160 ).


  • InAs
  • Quantum dots
  • Solar cell
  • Trap states


Dive into the research topics of 'Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices'. Together they form a unique fingerprint.

Cite this